Mission

Our work actively aims to develop extreme semiconductor devices and systems with unprecedented performance, including:

• High-frequency electronics (>300 GHz)

• High voltage electronics (600 V – 10 kV) for power conversion

• Digital electronics in a post-Si scenario

• High-temperature electronics

• Ubiquitous and large-area electronics

• Ultra-wide band gap materials

• RF, AI-Driven RF IC Design and Advanced Packaging

• New concepts for biosensors and energy harvesting device

• Accelerating the use of AI for Microelectronics

• Accelerating device investigation, fabrications and process engineering using AI