My group at MIT has been pushing the limits of microelectronics, demonstrating new extreme material semiconductor devices since 2006. We combine new electronic materials (e.g., 2D materials and III-Nitrides) with novel device concepts (e.g., lateral and vertical FinFETs, field emitters, and chemical sensors), and showcase this combination through impactful system-level prototypes. 

 

What motivates us?

To ensure maximum impact, we use the new physics of novel materials to improve a wide variety of semiconductor devices. We enjoy prototyping systems based on these novel devices. Almost all our students learn across the entire nanoelectronics stack, from materials to systems, with a strong emphasis on devices. 

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Our Research

We believe in integrating electrical engineering, device physics, and materials science, and multidisciplinary approaches to push the boundaries of microelectronics. Our group enthusiastically collaborates with industry and academic partners to develop the next generation of microelectronic technologies, ranging from zero-energy systems for 6G networks and power electronics to address the energy challenge, to microprocessors for a future Venus rover. 

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Recognition 

We congratulate our group members on receiving the IEEE George Smith award for the best paper published in IEEE Electron Device Letters twice: once for the invention of the tri-gate GaN transistor and a second time for the invention of the vertical FinFET power device. Demonstrating the highest operating frequencies in GaN transistors, as well as the first MoS2 electronic circuits, are some of the key technologies we strive to push our limits in scientific discovery.

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Culture

When a group member is recognized for their work through awards and scientific headway, we celebrate their success and embrace the impact they bring to our community and its culture. These moments of recognition are inspiring, serving as a stepping stone for future students to strive to discover, expand upon, and create new standards. Group culture is critical as it sets the foundation for their semiconductor careers. More importantly, it also shapes the kind of individual they will become in society as they evolve in their research career. This component is a critical part of my group, as students learn to become excellent device design engineers, we also have plenty of opportunities to evolve as well-prepared citizens within the MIT community and beyond. We are driven by open discussions, collaboration and teamwork, building long-lasting connections within a support system that serves not just us but the larger MIT community and the multidimensional semiconductor ecosystem worldwide.

 

Future Direction

We are currently working on a wide variety of projects, mainly on GaN devices for quantum computing, cell-sized microsystems, high-temperature electronics for Venus applications, large-area distributed neural networks based on MoS2, and graphene-based electronic nose technology, to name only a few. 

 

We strive to push our limits by applying state-of-the-art standards for device design experiments within Gallium Nitride and 2D electronics.  

- Tomás Palacios