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Tomás Palacios Group

Advanced Semiconductor Materials and Devices


 We focus on combining extreme electronic materials such as Graphene and Gallium Nitride (GaN), with nanotechnology, making new devices using system-level concepts to start the next revolution in semiconductor devices, with a goal of creating the next generation of power electronics and their system-level applications. Our group has made pioneering contributions to two-dimensional materials and devices, and their heterogeneous integration with state-of-the-art silicon electronics.

Vision and Mission

Our work centers around the belief new semiconductor physics and novel materials can impact semiconductor devices and systems with unprecedented performance. We are working on many exciting applications, including:

  • High-frequency electronics (>300 GHz)

  • High voltage electronics (600 V – 10 kV) for power conversion

  • Digital electronics in a post-Si scenario

  • High-temperature electronics

  • Ubiquitous and large-area electronics

  • New concepts for biosensors and energy harvesting devices

  • Visit the Projects page to learn more about our work.

  • News archives of our group can be found here

Feel free to contact me if you have questions or if you would like more information about my group! Click here to read about my Research Advising Philosophy. 

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